BUK6E2R0-30C datasheet, mosfet equivalent, NXP Semiconductors

Features and benefits

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applicatio.

Application

1.2 Features and benefits
* AEC Q101 compliant
* Suitable for intermediate level gate drive sources
* Suit.

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perform.

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